epitaxial layer transfer (eltran: a registered trademark of canon inc.) method (Canon inc)
90
Structured Review
Canon inc
epitaxial layer transfer (eltran: a registered trademark of canon inc.) method
Epitaxial Layer Transfer (Eltran: A Registered Trademark Of Canon Inc.) Method, supplied by Canon inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/epitaxial+layer+transfer+(eltran)/epitaxial+layer+transfer++eltran++a+registered+trademark+of+canon+inc+++method/us09900007-232-109-116
Average 90 stars, based on 1 article reviews
Epitaxial Layer Transfer (Eltran: A Registered Trademark Of Canon Inc.) Method, supplied by Canon inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/epitaxial+layer+transfer+(eltran)/epitaxial+layer+transfer++eltran++a+registered+trademark+of+canon+inc+++method/us09900007-232-109-116
Average 90 stars, based on 1 article reviews
epitaxial layer transfer (eltran: a registered trademark of canon inc.) method - by Bioz Stars,
2026-10
90/100 stars
Images
Related Articles
other:Article Title: Memory devices and formation methods Article Snippet: Article Title: Semiconductor device and method of fabricating the same Article Snippet: Some kinds are known for the SOI substrate according to its structure and fabricating method, and typically, SIMOX (Separation by Implanted Oxygen), Article Title: Programmable logic device Article Snippet: Instead of the p-type semiconductor substrate 201, the following substrate may be used as a silicon on insulator (SOI) substrate: a so-called separation by implanted oxygen (SIMOX) substrate which is formed in such a manner that after an oxygen ion is implanted into a mirror-polished Generated:Article Title: Semiconductor storage device comprising peripheral circuit, Shielding layer, and memory cell array Article Snippet: .. Instead of the p-type semiconductor substrate 201, the following substrate may be used as a silicon on insulator (SOI) substrate: a so-called separation by implanted oxygen (SIMOX) substrate which is formed in such a manner that after an oxygen ion is implanted into a mirror-polished wafer, an oxide layer is formed at a certain depth from the surface and defects generated in a surface layer are eliminated by high temperature heating; or an SOI substrate formed by a technique called a Smart-Cut method in which a semiconductor substrate is cleaved by utilizing the thermally induced growth of a minute void formed by implantation of a hydrogen ion, an epitaxial Article Title: Semiconductor device Article Snippet: .. Instead of the p-type semiconductor substrate 201, the following SOI (silicon on insulator) substrate may be used: an SIMOX (separation by implanted oxygen) substrate which is formed in such a manner that oxygen ions are implanted into a mirror-polished wafer, and then high-temperature heating is performed to form an oxide layer at a certain depth from the surface and to eliminate defects generated in a surface layer; an SOI substrate formed by a Smart-Cut method in which a semiconductor substrate is cleaved by utilizing growth of minute voids, which are formed by implantation of hydrogen ions, by thermal treatment; or an SOI substrate formed by an Article Title: Semiconductor device and method for driving semiconductor device Article Snippet: .. Examples of the SOI substrate include a so-called SIMOX (separation by implanted oxygen) substrate which is formed in such a manner that after an oxygen ion is implanted into a mirror-polished wafer, an oxide layer is formed at a certain depth from the surface and defects generated in a surface layer are eliminated by high-temperature heating; an SOI substrate formed by the Smart-Cut process in which a semiconductor substrate is cleaved by utilizing growth of a minute void, which is formed by implantation of a hydrogen ion, by heat treatment; and an SOI substrate formed by Article Title: Programmable logic device Article Snippet: .. Examples of the SOI substrate that can be used as the semiconductor substrate include a so-called SIMOX (separation by implanted oxygen) substrate which is formed in such a manner that after an oxygen ion is implanted into a mirror-polished wafer, an oxide layer is formed at a certain depth from the surface and defects generated in a surface layer are eliminated by high-temperature heating; an SOI substrate formed by the Smart-Cut process in which a semiconductor substrate is cleaved by utilizing growth of a minute void, which is formed by implantation of a hydrogen ion, by heat treatment; and an SOI substrate formed by Article Title: Reducing data backup and recovery periods in processors Article Snippet: .. Instead of the p-type semiconductor substrate 201, the following substrate may be used as a silicon on insulator (SOI) substrate: a so-called separation by implanted oxygen (SIMOX) substrate which is formed in such a manner that after an oxygen ion is implanted into a mirror-polished wafer, an oxide layer is formed at a certain depth from a surface and defects generated in a surface layer are eliminated by high-temperature heating; or an SOI substrate formed by a technique called a Smart-Cut method in which a semiconductor substrate is cleaved by utilizing the thermally induced growth of a minute void formed by implantation of a hydrogen ion, an epitaxial |